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| (R) STPS20H100CT/CF/CG/CG-1 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS n 2 x 10 A 100 V 175C 0.64 V A1 K A2 n n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB Insulating Voltage = 2000V DC Capacitance = 45 pF A2 A1 K A2 K A1 ISOWATT220AB STPS20H100CF TO-220AB STPS20H100CT K DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB 2 2 D PAK / I PAK Tc = 160C per diode per device Parameter Repetitive peak reverse voltage Value 100 30 10 20 250 1 3 - 65 to + 175 175 10000 Unit V A A A2 A1 A1 A2 K D2PAK STPS20H100CG I2PAK STPS20H100CG-1 ISOWATT220AB Tc = 145C IFSM IRRM IRSM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square A A A C C V/s *: dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j - a ) 1/7 May 2000 - Ed: 3C STPS20H100CT/CF/CG/CG-1 THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK / I PAK ISOWATT220AB TO-220AB / D PAK / I PAK ISOWATT220AB Rth (c) TO-220AB / D PAK / I PAK ISOWATT220AB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2 2 2 2 2 2 Value Per diode Per diode Total Total Coupling Coupling 1.6 4 0.9 3.2 0.15 2.5 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ. 2 Max. 4.5 6 0.71 0.77 0.81 0.88 Unit A mA V VR = VRRM IF = 8 A IF = 10 A IF = 16 A IF = 20 A IF = 8 A IF = 10 A IF = 16 A IF = 20 A 0.56 0.59 0.65 0.67 0.58 0.64 0.68 0.73 To evaluate the maximum conduction losses use the following equation : P = 0.55 x IF(AV) + 0.009 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 8 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) 12 Rth(j-a)=Rth(j-c) TO220AB 10 6 4 2 IF(av) (A) 0 0 2 4 6 8 =1 8 6 Rth(j-a)=15C/W Rth(j-a)=40C/W ISOWATT220AB T 4 2 Tamb(C) 0 =tp/T tp 10 12 0 25 50 75 100 125 150 175 2/7 STPS20H100CT/CF/CG/CG-1 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK, I2PAK) IM(A) 200 180 160 140 120 100 80 60 40 IM 20 0 1E-3 140 120 100 Tc=50C Tc=75C Tc=125C Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB). IM(A) 80 60 Tj=50C Tj=75C 40 IM 20 t Tj=125C t =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220AB, D2PAK, I2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOWATT220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.5 = 0.2 = 0.1 Single pulse = 0.2 = 0.1 Single pulse 0.2 tp(s) 1E-2 1E-1 =tp/T tp tp(s) 0.0 1E-2 1E-1 1E+0 1E+1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 Tj=150C Tj=125C Tj=100C F=1MHz Tj=25C 500 Tj=25C 200 VR(V) 0 10 20 30 40 50 60 70 80 90 100 100 1 2 5 VR(V) 10 20 50 100 3/7 STPS20H100CT/CF/CG/CG-1 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versus coppersurface undertab(Epoxy printedcircuit board FR4, copper thickness: 35m) (D2PAK). Rth(j-a) (C/W) 80 70 Tj=150C Typical values Tj=125C 100.0 IFM(A) 10.0 60 50 40 Tj=25C Tj=125C Typical values 1.0 30 20 10 0.1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 S(Cu) (cm ) 0 5 10 15 20 25 30 35 40 0 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Millimeters Min. H2 Dia L5 C A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. L7 L6 L2 F2 F1 L9 L4 F G1 G M E D 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 4/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 5/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 R V2 Millimeters Min. Typ. Max. Min. Inches Typ. Max. D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R 4.30 4.60 0.169 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.25 1.40 0.049 0.055 0.45 0.60 0.017 0.024 1.21 1.36 0.047 0.054 8.95 9.35 0.352 0.368 10.00 10.28 0.393 0.405 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 0.40 0.016 0 8 0 8 FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 6/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A A1 b b1 b2 C C2 D e E L L1 L2 Millimeters Min. 4.30 2.49 0.70 1.20 1.25 0.45 1.21 8.95 2.44 10.00 13.10 3.48 1.27 1.40 Typ. Max. Min. 4.60 0.169 2.69 0.098 0.93 0.028 1.38 0.047 0.049 0.055 0.60 0.018 1.36 0.048 9.35 0.352 2.64 0.096 10.28 0.394 13.60 0.516 3.78 0.137 1.40 0.050 0.024 0.054 0.368 0.104 0.405 0.535 0.149 0.055 Inches Typ. Max. 0.181 0.106 0.037 0.054 Ordering type STPS20H100CT STPS20H100CF STPS20H100CG-1 STPS20H100CG STPS20H100CG-TR n Marking STPS20H100CT Package TO-220AB Weight 2.20g 2.08g 1.49g 1.48g 1.48g Base qty 50 50 50 50 1000 Delivery mode Tube Tube Tube Tube Tape & reel STPS20H100CF ISOWATT220AB STPS20H100CG STPS20H100CG STPS20H100CG I PAK D2PAK D2PAK 2 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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